CRYSTALLINITY IMPROVEMENT BY SYNCHROTRON RADIATION IRRADIATION IN LOW-TEMPERATURE SI EPITAXIAL-GROWTH USING DISILANE

被引：25

作者：

UTSUMI, Y

TAKAHASHI, J

AKAZAWA, H

URISU, T

机构：

[1] Morinosato Wakamiya, Atsugi-shi, Kanagawa

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 11B期

关键词：

SYNCHROTRON RADIATION; EPITAXIAL GROWTH; PHOTOEXCITED PROCESS; CHEMICAL VAPOR DEPOSITION;

D O I：

10.1143/JJAP.30.3195

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si films were grown on Ge substrates by Synchrotron Radiation (SR)-excited crystal growth around the low substrate temperature limit for epitaxial growth. From the observation of Reflective High Energy Electron Diffraction and Raman scattering spectra, it was found that the crystallinity of the Si film was clearly improved by SR irradiation. From the temperature dependence of the growth rate, it was confirmed that SR irradiation greatly enhances the growth rate in the lower temperature region below 500-degrees-C.

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页码：3195 / 3198

页数：4

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