SOME PROPERTIES OF LASER ANNEALED SHALLOW AS+ IMPLANTED SILICON

被引：1

作者：

SCANLON, PJ ^{[1
]}

BARFOOT, KM ^{[1
]}

SKENSVED, P ^{[1
]}

WHITTON, JL ^{[1
]}

CALDER, ID ^{[1
]}

SHEPHERD, FR ^{[1
]}

机构：

[1] BELL NO RES,OTTAWA K1Y 4H7,ONTARIO,CANADA

来源：

关键词：

D O I：

10.1016/0168-583X(85)90578-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：342 / 347

页数：6

共 5 条

[1] MASETTI G, 1983, EL SOC EXT ABSTR, V83, P639
[2] Mitchell I. V., 1981, Nuclear Science Applications, Section A, V1, P99
[3] PRECISE PROFILES FOR ARSENIC IMPLANTED IN SI AND SIO2 OVER A WIDE IMPLANTATION ENERGY-RANGE (10 KEV-2.56 MEV)
NAKATA, J
KAJIYAMA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (09): : 1363 - 1369
[4] RANGE DISTRIBUTIONS AND THERMAL-ANNEALING PROPERTIES OF LOW-ENERGY ARSENIC AND INDIUM IMPLANTS IN SILICON
WHITLOW, HJ
BLOOD, P
FARMERY, BW
OCONNOR, DJ
SHANNON, JM
THOMPSON, MW
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 200 (2-3): : 491 - 497
[5] OPTIMIZATION OF A RUTHERFORD BACKSCATTERING GEOMETRY FOR ENHANCED DEPTH RESOLUTION
WILLIAMS, JS
[J]. NUCLEAR INSTRUMENTS & METHODS, 1975, 126 (02): : 205 - 215