THE INFLUENCE OF ALKALI ATOMS IMPLANTED IN SILICON ON THE NEGATIVE SECONDARY ION EMISSION

被引：2
|
作者：
FRENTRUP, W
GRIEPENTROG, M
KLOSE, H
KREYSCH, G
MULLERJAHREIS, U
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 84卷 / 01期
关键词：
D O I：
10.1002/pssa.2210840134
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：269 / 272
页数：4
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