INFLUENCE OF ALXGA1-XAS LAYER THICKNESS ON THRESHOLD CURRENT-DENSITY AND DIFFERENTIAL QUANTUM EFFICIENCY FOR GAAS-ALXGA1-XAS DH LASERS

被引：16

作者：

CASEY, HC ^{[1
]}

PANISH, MB ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 03期

关键词：

D O I：

10.1063/1.321738

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1393 / 1395

页数：3

共 7 条

[1] GAAS-ALXGA1-XAS HETEROSTRUCTURE LASER WITH SEPARATE OPTICAL AND CARRIER CONFINEMENT [J].

CASEY, HC ;

PANISH, MB ;

SCHLOSSE.WO ;

PAOLI, TL .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) :322-333

[2] REFRACTIVE-INDEX OF ALXGA1-X AS BETWEEN 1.2 AND 1.8 EV [J].

CASEY, HC ;

SELL, DD ;

PANISH, MB .

APPLIED PHYSICS LETTERS, 1974, 24 (02) :63-65

[3] BEAM DIVERGENCE OF EMISSION FROM DOUBLE-HETEROSTRUCTURE INJECTION LASERS [J].

CASEY, HC ;

PANISH, MB ;

MERZ, JL .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (12) :5470-5475

[4] GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

CHO, AY ;

CASEY, HC .

APPLIED PHYSICS LETTERS, 1974, 25 (05) :288-290

[5]

JOYCE WB, UNPUBLISHED

[6] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE LASERS-EFFECT OF DOPING ON LASING CHARACTERISTICS OF GAAS [J].

PINKAS, E ;

HAYASHI, I ;

MILLER, BI ;

FOY, PW .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) :2827-&

[7] CONCENTRATION-DEPENDENCE OF REFRACTIVE-INDEX FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.2 AND 1.8 EV [J].

SELL, DD ;

CASEY, HC ;

WECHT, KW .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) :2650-2657

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