LOW-FREQUENCY NOISE IN GALLIUM-ARSENIDE MESFETS

被引：12

作者：

DUH, KH

ZHU, XC

VANDERZIEL, A

机构：

[1] Univ of Minnesota, Electrical, Engineering Dep, Minneapolis, MN,, USA, Univ of Minnesota, Electrical Engineering Dep, Minneapolis, MN, USA

来源：

SOLID-STATE ELECTRONICS | 1984年 / 27卷 / 11期

关键词：

(MESFETS) METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS - DIFFUSION NOISE - LOW-FREQUENCY NOISE - THERMAL NOISE;

D O I：

10.1016/0038-1101(84)90074-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1003 / &

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[9]

VANDERZIEL A, 1979, ADV ELECTRONICS ELEC, V49

[10]

VINER J, 1969, THESIS U MINNESOTA

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