MODIFICATION OF THRESHOLD CURRENT OF GAAS LASER BY A REFLECTIVE COATING ON 1 END

被引：8

作者：

NANNICHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1965年 / 4卷 / 01期

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D O I：

10.1143/JJAP.4.53

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：53 / &

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共 5 条

[1] OPTICAL PROPERTIES OF SILICON MONOXIDE IN THE WAVELENGTH REGION FROM 0.24 TO 14.0 MICRONS [J].

HASS, G ;

SALZBERG, CD .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1954, 44 (03) :181-187

[2] REFRACTIVE INDEX OF GAAS [J].

MARPLE, DTF .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) :1241-&

[3] ELECTROMAGNETIC THEORY OF THE SEMICONDUCTOR JUNCTION LASER [J].

MCWHORTER, AL .

SOLID-STATE ELECTRONICS, 1963, 6 (05) :417-423

[4]

Stern F, 1964, PHYS REV A, V133, P553

[5] MODIFICATION OF THRESHOLD CURRENT + NEAR-FIELD EMISSION PATTERN OF GAAS LASER BY ADSORBED DIELECTRIC LAYER [J].

WALKER, EJ ;

MICHEL, AE .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (08) :2285-&