MIS-SCHOTTKY THEORY UNDER CONDITIONS OF OPTICAL CARRIER GENERATION IN SOLAR-CELLS

[1] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +

[2] DIRECT CURRENTS THROUGH INTERFACE STATES IN METAL-SEMICONDUCTOR CONTACTS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (10) : 881 - 883

[3] POTENTIAL BARRIERS TO ELECTRON TUNNELLING IN ULTRATHIN FILMS OF SIO2 [J]. SOLID STATE COMMUNICATIONS, 1974, 14 (10) : 1011 - 1014

[4] EFFECTS OF INTERFACIAL OXIDE LAYERS ON PERFORMANCE OF SILICON SCHOTTKY-BARRIER SOLAR CELLS [J]. APPLIED PHYSICS LETTERS, 1976, 28 (02) : 97 - 98

[5] McOuat R. F., 1975, 11th IEEE Photovoltaic Specialists Conference, P371

[6] Olsen L. C., 1975, 11th IEEE Photovoltaic Specialists Conference, P381

[7] CONDUCTION MECHANISM IN SCHOTTKY DIODES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (10) : 1920 - +

[8] 15PERCENT EFFICIENT ANTIREFLECTION-COATED METAL-OXIDE-SEMICONDUCTOR SOLAR CELL [J]. APPLIED PHYSICS LETTERS, 1975, 27 (02) : 95 - 98

[1] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +

[2] DIRECT CURRENTS THROUGH INTERFACE STATES IN METAL-SEMICONDUCTOR CONTACTS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (10) : 881 - 883

[3] POTENTIAL BARRIERS TO ELECTRON TUNNELLING IN ULTRATHIN FILMS OF SIO2 [J]. SOLID STATE COMMUNICATIONS, 1974, 14 (10) : 1011 - 1014

[4] EFFECTS OF INTERFACIAL OXIDE LAYERS ON PERFORMANCE OF SILICON SCHOTTKY-BARRIER SOLAR CELLS [J]. APPLIED PHYSICS LETTERS, 1976, 28 (02) : 97 - 98

[5] McOuat R. F., 1975, 11th IEEE Photovoltaic Specialists Conference, P371

[6] Olsen L. C., 1975, 11th IEEE Photovoltaic Specialists Conference, P381

[7] CONDUCTION MECHANISM IN SCHOTTKY DIODES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (10) : 1920 - +

[8] 15PERCENT EFFICIENT ANTIREFLECTION-COATED METAL-OXIDE-SEMICONDUCTOR SOLAR CELL [J]. APPLIED PHYSICS LETTERS, 1975, 27 (02) : 95 - 98