ELECTRONIC TRANSPORT PHENOMENA OF LA2/3+XTIO3-DELTA (X-LESS-THAN-0.2) - METAL-NONMETAL TRANSITION BY ELECTRON DOPING

被引：42

作者：

KIM, IS ^{[1
]}

NAKAMURA, T ^{[1
]}

INAGUMA, Y ^{[1
]}

ITOH, M ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,ENGN MAT RES LAB,NAGATSUTA 4259,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

JOURNAL OF SOLID STATE CHEMISTRY | 1994年 / 113卷 / 02期

关键词：

D O I：

10.1006/jssc.1994.1372

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

Carriers were introduced into La2/3TiO3, an insulator with double perovskite structure having an A-site vacancy, by a hydrogen reduction, and their electronic transport phenomena and crystal structure were studied. The lightly doped samples showed semiconducting behavior, while the heavily doped samples showed metallic conductivity. This carrier-concentration-dependent metal-nonmetal transition has been found at 3d electron density of 0.33 per formula unit with simultaneous occurrence of a crystal symmetry change from P4/mmm to Pnma. The electronic state of the La2/3+xTiO3-delta system was characterized by measuring the resistivity, the Seebeck coefficient, and the magnetic susceptibility. (C) 1994 Academic Press, Inc.

引用

页码：281 / 288

页数：8

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