EFFECT OF SUPERLATTICES ON THE LOW-ENERGY ION-INDUCED DAMAGE IN GAAS/AL(GA)AS STRUCTURES - CHANNELING OR DIFFUSION

被引：25

作者：

GREEN, DL ^{[1
]}

HU, EL ^{[1
]}

STOFFEL, NG ^{[1
]}

机构：

[1] BELLCORE,RED BANK,NJ 07701

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 06期

关键词：

D O I：

10.1116/1.587618

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：3311 / 3316

页数：6

共 14 条

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[5] CHARACTERIZATION OF LOW-ENERGY ION-INDUCED DAMAGE USING THE MULTIPLE-QUANTUM-WELL PROBE TECHNIQUE WITH AN INTERVENING SUPERLATTICE [J].

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[6] CALIBRATION OF THE MULTIPLE QUANTUM-WELL PROBE TECHNIQUE FOR DRY-ETCH-INDUCED DAMAGE ANALYSIS [J].

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[7]

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[8] IMPURITY TRAPPING, INTERFACE STRUCTURE, AND LUMINESCENCE OF GAAS QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[9] RADICAL BEAM ION-BEAM ETCHING OF GAAS [J].

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[10]

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