CHARACTERIZATION OF SILICON-OXIDE FILMS GROWN AT ROOM-TEMPERATURE BY POINT-TO-PLANE CORONA DISCHARGE

Oxide films grown on silicon in dry oxygen ambient at room temperature by negative point-to-plane corona discharge are investigated. A significant oxidation rate is observed at room temperature using this technique. Electrical properties of these room temperature grown oxides are examined. The capacitance-voltage measurements on the MOS structures fabricated from these oxides indicate a negative flat-band voltage of -1.5 V. Interface state density distribution in the range of 10(10)-10(13) cm-2(eV)-1 is observed with a value of 2 x 10(10) cm-2(eV)-1 at 0.17 eV above the valence band edge. Electrical conduction through the oxide is greater for negative values of applied gate bias voltages and the magnitude of conduction through the oxide decreases with decreasing current density during the corona discharge. Oxides grown at room temperature by this technique may find selective application in low temperature device processing.