TIME AND FREQUENCY-DOMAIN NUMERICAL PHYSICAL MODELING OF 2 TERMINAL MICROWAVE NONLINEAR CIRCUITS APPLIED TO MILLIMETER-WAVE AVALANCHE-DIODE FREQUENCY-MULTIPLIERS

被引:0
|
作者
DALLE, C [1 ]
FRISCOURT, MR [1 ]
ROLLAND, PA [1 ]
机构
[1] UNIV SCI & TECHNOL,IEMN,DEPT HYPERFREQUENCES & SEMICOND,CNRS,UMR 9929,F-59655 VILLENEUVE DASCQ,FRANCE
关键词
D O I
10.1108/eb010113
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
Time and frequency domain complementary numerical models of microwave non-linear circuits using two-terminal active semiconductor devices are presented. Their main feature is the use of numerical one-dimensional macroscopic physical models as semiconductor device models. Their respective capability is illustrated by some results of a study devoted to the optimization of millimeter-wave avalanche diode frequency multipliers.
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页码:525 / 536
页数:12
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