EVIDENCE FOR THE EXISTENCE OF AN INTERFACE TRANSITION LAYER FOR PLASMA CVD GROWN SNO2/FE2O3 MULTILAYER FILMS

被引：2

作者：

YAN, DW

MA, XC

机构：

[1] Jilin Univ, Changchun, China

来源：

APPLIED SURFACE SCIENCE | 1991年 / 52卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

Films--Electric Conductivity - Oxides--Chemical Vapor Deposition - Plasmas--Production - Sensors--Thin Films - Spectroscopy; Photoelectron--Applications;

D O I：

10.1016/0169-4332(91)90114-Y

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

For short deposition times of the SnO2 layer, the conductance of SnO2/Fe2O3 multi-layer films, which were prepared by plasma CVD, in air and in sensing gas ambient may decrease with an increase of the deposition time. A transition layer existing near the interface between the SnO2 and Fe2O3 layers, is suggested to explain these phenomena. This assumption is supported by XPS depth-profiling measurements.

引用

页码：53 / 58

页数：6