ELECTRICAL PROPERTIES OF SILICON FILMS GROWN EPITAXIALLY ON SAPPHIRE

被引：47

作者：

DUMIN, DJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1967年 / 38卷 / 04期

关键词：

D O I：

10.1063/1.1709782

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1909 / &

共 24 条

[1] EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES [J].

ALLEN, FG .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) :1510-1511

[2]

BHOLA SR, 1963, RCA REV, V24, P701

[3] EPITAXY OF SILICON ON ALUMINA-STRUCTURAL EFFECTS [J].

BICKNELL, RW ;

JOYCE, BA ;

NEAVE, JH ;

SMITH, GV .

PHILOSOPHICAL MAGAZINE, 1966, 14 (127) :31-&

[4] EPITAXIAL DEPOSITION OF SILICON ON QUARTZ [J].

BICKNELL, RW ;

STIRLAND, DJ ;

CHARIG, JM ;

JOYCE, BA .

PHILOSOPHICAL MAGAZINE, 1964, 9 (102) :965-&

[5] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J].

DEBYE, PP ;

CONWELL, EM .

PHYSICAL REVIEW, 1954, 93 (04) :693-706

[6] DEFORMATION OF AND STRESS IN EPITAXIAL SILICON FILMS ON SINGLE-CRYSTAL SAPPHIRE [J].

DUMIN, DJ .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2700-&

[7] AUTODOPING OF SILICON FILMS GROWN EPITAXIALLY ON SAPPHIRE [J].

DUMIN, DJ ;

ROBINSON, PH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (05) :469-+

[8] A1 REDISTRIBUTION IN THERMALLY OXIDIZED SI SURFACE [J].

EDAGAWA, H ;

MORITA, Y ;

INUISHI, Y .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1963, 18 (03) :460-&

[9] CHEMICAL POLISHING OF SINGLE CRYSTAL A -ALUMINA USING SILICON [J].

FILBY, JD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (10) :1085-&

[10] INTERACTIONS BETWEEN OXYGEN AND ACCEPTOR ELEMENTS IN SILICON [J].

FULLER, CS ;

DOLEIDEN, FH .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) :1264-1265

← 1 2 3 →