HIGH-FREQUENCY CHARACTERISTICS OF DIRECTLY MODULATED INGAASP RIDGE WAVE-GUIDE AND BURIED HETEROSTRUCTURE LASERS

被引:154
作者
TUCKER, RS [1 ]
KAMINOW, IP [1 ]
机构
[1] AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
关键词
D O I
10.1109/JLT.1984.1073654
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:385 / 393
页数:9
相关论文
共 26 条
[1]   INFLUENCE OF SPECTRAL HOLE-BURNING ON QUATERNARY LASER TRANSIENTS [J].
ADAMS, MJ ;
OSINSKI, M .
ELECTRONICS LETTERS, 1983, 19 (16) :627-628
[2]   EFFECT OF GAIN SATURATION ON INJECTION-LASER SWITCHING [J].
CHANNIN, DJ .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :3858-3860
[3]  
DUTTA NK, 1984, J LIGHTWAVE TECHNOL, V2, P201
[4]   HIGH-FREQUENCY CHARACTERISTICS OF GAAIAS INJECTION-LASERS [J].
FIGUEROA, L ;
SLAYMAN, CW ;
YEN, HW .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (10) :1718-1727
[5]   REDUCTION OF RESONANCE-LIKE PEAK IN DIRECT MODULATION DUE TO CARRIER DIFFUSION IN INJECTION-LASER [J].
FURUYA, K ;
SUEMATSU, Y ;
HONG, T .
APPLIED OPTICS, 1978, 17 (12) :1949-1952
[6]   4 GBIT/S DIRECT MODULATION OF 1.3 MU-M INGAASP/INP SEMICONDUCTOR-LASERS [J].
HAGIMOTO, K ;
OHTA, N ;
NAKAGAWA, K .
ELECTRONICS LETTERS, 1982, 18 (18) :796-798
[7]   LOW-THRESHOLD INGAASP RIDGE WAVEGUIDE LASERS AT 1.3-MU-M [J].
KAMINOW, IP ;
STULZ, LW ;
KO, JS ;
DENTAI, AG ;
NAHORY, RE ;
DEWINTER, JC ;
HARTMAN, RL .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (08) :1312-1319
[8]   LOW THRESHOLD RIDGE WAVEGUIDE LASER AT 1.55-MU-M [J].
KAMINOW, IP ;
STULZ, LW ;
KO, JS ;
MILLER, BI ;
FELDMAN, RD ;
DEWINTER, JC ;
POLLACK, MA .
ELECTRONICS LETTERS, 1983, 19 (21) :877-879
[9]   HIGH-SPEED 1.55 MU-M SINGLE-LONGITUDINAL-MODE RIDGE WAVEGUIDE C-3 LASER [J].
KAMINOW, IP ;
KO, JS ;
LINKE, RA ;
STULZ, LW .
ELECTRONICS LETTERS, 1983, 19 (19) :784-785
[10]   LONGITUDINAL MODE SELF-STABILIZATION IN SEMICONDUCTOR-LASERS [J].
KAZARINOV, RF ;
HENRY, CH ;
LOGAN, RA .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :4631-4644