INVESTIGATION OF ELECTRON TRAPS IN CDINGAS4 SINGLE-CRYSTALS

被引：0

作者：

ABDULLAEV, GB ^{[1
]}

AGAEV, VG ^{[1
]}

MAMEDOV, ND ^{[1
]}

NANI, RK ^{[1
]}

SALAEV, EY ^{[1
]}

机构：

[1] ACAD SCI AZSSR,INST PHYS,BAKU,AZSSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1977年 / 11卷 / 01期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：7 / 9

页数：3

共 10 条

[1] ABDULLAEV GB, 1975, SOV PHYS SEMICOND+, V8, P1417
[2] TRAP DENSITY DETERMINATION BY SPACE-CHARGE-LIMITED CURRENTS
BUBE, RH
[J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (05) : 1733 - &
[3] DZHURAEV ND, 1973, THESIS BAKU
[4] Lampert M.A., 1970, CURRENT INJECTION SO
[5] ELECTRON TRAPPING LEVELS IN CADMIUM SELENIDE SINGLE-CRYSTALS
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RIZZO, A
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GALASSIN.S
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[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (12) : 5463 - 5269
[6] DEEP HOLE TRAPS IN P-TYPE GASE SINGLE-CRYSTALS
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MURRI, R
RIZZO, A
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RUGGIERO, L
[J]. PHYSICAL REVIEW B, 1974, 10 (08) : 3387 - 3393
[7] HOLE CENTERS IN GASE
MANFREDOTTI, C
RIZZO, A
DEBLASI, C
GALASSINI, S
RUGGIERO, L
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (10) : 4531 - 4536
[8] A New Semiconducting Alloy in the CdS-In2S3-Ga2S3 System
Shand, W. A.
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1970, 3 (01): : K77 - K79
[9] HIGH-FIELD ISOTHERMAL CURRENTS AND THERMALLY STIMULATED CURRENTS IN INSULATORS HAVING DISCRETE TRAPPING LEVELS
SIMMONS, JG
TAYLOR, GW
[J]. PHYSICAL REVIEW B, 1972, 5 (04): : 1619 - &
[10] SPACE-CHARGE-LIMITED CURRENTS IN CADMIUM SULPHIDE WITH MORE THAN F1 DISCRETE TRAPPING LEVEL
TRODDEN, WG
[J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1967, 18 (04): : 401 - &