VALENCE-BAND ELECTRONIC-STRUCTURE OF ZN3P2 AS A FUNCTION OF ANNEALING AS STUDIED BY SYNCHROTRON RADIATION PHOTOEMISSION

被引：19

作者：

NELSON, AJ ^{[1
]}

KAZMERSKI, LL ^{[1
]}

ENGELHARDT, M ^{[1
]}

HOCHST, H ^{[1
]}

机构：

[1] UNIV WISCONSIN MADISON,CTR SYNCHROTRON RADIAT,3731 SCHNEIDER DR,STOUGHTON,WI 53589

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 03期

关键词：

D O I：

10.1063/1.345695

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultraviolet photoemission (UPS) utilizing synchrotron radiation has been used to characterize changes in the valence-band electronic structure of crystalline Zn3P2 as a function of annealing temperature. The Zn3P2 crystal was etched in bromine-methanol prior to analysis and annealing was performed in vacuum at 300 and 350 °C after sputter cleaning. The UPS spectra for the virgin material are qualitatively similar to the photoemission results for various II-VI Zn compound semiconductors and a comparison of the Zn 3d binding energies with respect to the valence band maximum is presented. The results for the virgin material and the 300 °C anneal are further compared with the theoretically predicted band structure of Zn3P2 as determined by a pseudopotential energy band calculation. Loss of phosphorus from the surface and the presence of elemental zinc on the surface after the 350 °C anneal is evident.

引用

页码：1393 / 1396

页数：4

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