MECHANISM OF CONTROLLED SECONDARY-ELECTRON EMISSION

被引：0

作者：

TROFIMCHUK, NN ^{[1
]}

LORIKYAN, MP ^{[1
]}

KAVALOV, RL ^{[1
]}

ARVANOV, AN ^{[1
]}

GAVALYAN, VG ^{[1
]}

机构：

[1] EREVAN PHYS INST,EREVAN,ARSSR

来源：

ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI | 1975年 / 69卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：639 / 646

页数：8

共 17 条

[1]

BAKHSHYAN GG, 1967, IZV AN ARMSSR F, V2, P415

[2]

BRONSHTEIN IM, 1966, VTORICHNAYA ELEKTRON

[3]

BRONSHTEIN IM, 1971, RADIOTEKHNIKA ELEKTR, V16, P411

[4] CSI AS A HIGH-GAIN SECONDARY EMISSION MATERIAL [J].

EDGECUMBE, J ;

GARWIN, EL .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) :3321-+

[5]

FRIDRIKHOV SA, 1964, FIZ TVERD TELA, V6, P236

[6]

GARWIN EL, 1970, J APPL PHYS, V41, P4

[7] FIELD-ENHANCED SECONDARY ELECTRON EMISSION FROM FILMS OF LOW DENSITY [J].

GOETZE, GW ;

BOERIO, AH ;

GREEN, M .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) :482-+

[8] THE MECHANISM OF FIELD DEPENDENT SECONDARY EMISSION [J].

JACOBS, H ;

FREELY, J ;

BRAND, FA .

PHYSICAL REVIEW, 1952, 88 (03) :492-499

[9]

KAVALOV RL, 1968, IZV ACAD NAUK ARM SS, V3, P63

[10]

KAVALOV RL, 1973, THESIS EREVANSKII FI

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