TEMPERATURE-DEPENDENCE OF 2-MU-M STRAINED-QUANTUM-WELL INGAAS/INGAASP/INP DIODE-LASERS

被引：13

作者：

MARTINELLI, RU ^{[1
]}

MENNA, RJ ^{[1
]}

TRIANO, A ^{[1
]}

HARVEY, MG ^{[1
]}

OLSEN, GH ^{[1
]}

机构：

[1] SENSORS UNLIMITED INC,PRINCETON,NJ 08540

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 04期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19940222

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Strained multiquantum-well InGaAs lasers had CW thresholds near 50 mA at 2 mum at 312K. Abrupt decreases in characteristic temperatures (T(o)) occurred at 250 K for threshold current and 273 K for external quantum efficiency, indicating a highly temperature sensitive nonradiative recombination mechanism.

引用

页码：324 / 326

页数：3

共 9 条

[1] THE GEOCHEMISTRY OF THE LA GALISSONNIERE PLUTON - A MIDDLE PROTEROZOIC LATE-OROGENIC INTRUSION FROM THE EASTERN GRENVILLE PROVINCE, QUEBEC
BOURNE, J
[J]. CANADIAN JOURNAL OF EARTH SCIENCES, 1991, 28 (01) : 37 - 43
[2] LONG-WAVELENGTH HIGH-EFFICIENCY LOW-THRESHOLD INGAASP/INP MQW LASERS WITH COMPRESSIVE STRAIN
DAVIES, M
DION, M
HOUGHTON, DC
SEDIVY, JZ
VIGNERON, CM
[J]. ELECTRONICS LETTERS, 1992, 28 (21) : 2004 - 2006
[3] ROOM-TEMPERATURE OPERATION OF MOCVD-GROWN GAINAS/INP STRAINED-LAYER MULTIQUANTUM WELL LASERS IN 1-BULLET-8-MU-M RANGE
FOROUHAR, S
LARSSON, A
KSENDZOV, A
LANG, RJ
TOTHILL, N
SCOTT, MD
[J]. ELECTRONICS LETTERS, 1992, 28 (10) : 945 - 947
[4] LOW-THRESHOLD CONTINUOUS OPERATION OF INGAAS/INGAASP QUANTUM-WELL LASERS AT SIMILAR-TO-2.0-MU-M
FOROUHAR, S
KEO, S
LARSSON, A
KSENDZOV, A
TEMKIN, H
[J]. ELECTRONICS LETTERS, 1993, 29 (07) : 574 - 576
[5] HIGH-POWER 2.0-MU-M INGAASP LASER-DIODES
MAJOR, JS
NAM, DW
OSINSKI, JS
WELCH, DF
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (06) : 594 - 596
[6] INGAAS/INASPSB DIODE-LASERS WITH OUTPUT WAVELENGTHS AT 2.52-MU-M
MARTINELLI, RU
ZAMEROWSKI, TJ
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (02) : 125 - 127
[7] INGAAS INASP LASERS WITH OUTPUT WAVELENGTHS OF 1.58-2.45-MUM
MARTINELLI, RU
ZAMEROWSKI, TJ
LONGEWAY, PA
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (03) : 277 - 279
[8] MARTINELLI RU, 1986, LONG WAVELENGTH SEMI, P99
[9] LONG-WAVELENGTH STRAINED-LAYER INAS/GAINAS SINGLE-QUANTUM-WELL LASER GROWN BY MOLECULAR-BEAM EPITAXY ON INP SUBSTRATE
TOURNIE, E
GRUNBERG, P
FOUILLANT, C
KADRET, S
BOISSIER, G
BARANOV, A
JOULLIE, A
GAUMONTGOARIN, E
PLOOG, KH
[J]. ELECTRONICS LETTERS, 1993, 29 (14) : 1255 - 1257

← 1 →