THE ANALYSIS OF OXYGEN IN THE MATERIALS BY THE SECONDARY ION MASS-SPECTROMETRY

被引：0
作者：
LEEFATOU, AV
DOROZHKIN, AA
KOVARSKY, AP
机构：
来源：
RADIOTEKHNIKA I ELEKTRONIKA | 1992年 / 37卷 / 10期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1870 / 1874
页数：5
相关论文
共 7 条
[1]  
BENNINGHOVEN A, 1986, SECONDARY ION MASS S
[2]  
BURENKOV AF, 1980, TABLITSY PARAMETROV
[3]  
FOGEL YM, 1972, INT J MASS SPECTROM, V9, P109, DOI DOI 10.1016/0020-7381(72)80037-8
[4]   ION-IMPLANTED STANDARDS FOR SECONDARY ION MASS-SPECTROMETRIC DETERMINATION OF THE 1A-7A GROUP ELEMENTS IN SEMICONDUCTING MATRICES [J].
LETA, DP ;
MORRISON, GH .
ANALYTICAL CHEMISTRY, 1980, 52 (03) :514-519
[5]   IMPROVED QUANTIFICATION AND DETECTION LIMITS FOR OXYGEN ANALYSIS IN ALXGA1-XAS/GAAS MULTILAYERS WITH SECONDARY ION MASS-SPECTROSCOPY [J].
MEURIS, M ;
VANDERVORST, W ;
BORGHS, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :1663-1672
[6]   SECONDARY ION MASS-SPECTROMETRIC ION YIELDS AND DETECTION LIMITS OF IMPURITIES IN INDIUM-PHOSPHIDE [J].
TANAKA, T ;
HOMMA, Y ;
KUROSAWA, S .
ANALYTICAL CHEMISTRY, 1988, 60 (01) :58-61
[7]  
Wilson R.G., 1989, SECONDARY ION MASS S
1