GAINP/GAAS SCHOTTKY DIODES GROWN BY ATOMIC LAYER EPITAXY AND THEIR APPLICATION TO MESFETS

被引：3

作者：

JUNG, D

HYUGA, F

BEDAIR, SM

机构：

[1] N CAROLINA STATE UNIV, DEPT PHYS, RALEIGH, NC 27695 USA

[2] NIPPON TELEGRAPH & TEL PUBL CORP, LSI LABS, ATSUGI, KANAGAWA 24301, JAPAN

[3] N CAROLINA STATE UNIV, DEPT ELECT & COMP ENGN, RALEIGH, NC 27695 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 11期

关键词：

D O I：

10.1088/0268-1242/9/11/012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Atomic layer epitaxy (ALE) was used to grow GaInP/GaAs MESFET structures, where control of the thickness of the GaInP layer is critical. GaInP/GaAs Schottky diodes showed higher breakdown voltages than GaAs Schottky diodes. MESFETs with GaInP/GaAs Schottky gates showed a good saturation and pinch-off behaviour of the drain-source current.

引用

页码：2107 / 2109

页数：3