EXPERIMENTAL CHARACTERISTICS AND PERFORMANCE ANALYSIS OF MONOLITHIC INP-BASED HEMT MIXERS AT W-BAND

被引：11

作者：

KWON, YW

PAVLIDIS, D

MARSH, P

NG, GI

BROCK, TL

机构：

[1] Center for Space Terahertz Technology, Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor., MI

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1993年 / 41卷 / 01期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1109/22.210222

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experimental characteristics of monolithic In-AlAs/InGaAs HEMT mixers are presented together with a theoretical analysis. Experiments at W-band show a maximum conversion gain of 0.9 dB with 2 dBm of LO power level. This is the first demonstration of a monolithic HEMT mixer with conversion gain at W-band. The conversion gain dependence on LO power, RF frequency and gate bias is measured and compared with the theoretical predictions. Good agreement between the theory and experiment could be found.

引用

页码：1 / 8

页数：8

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