DETERMINATION OF STOICHIOMETRY OF SIOX THIN-FILMS USING AN AUGER PARAMETER

被引：18
作者：
ALFONSETTI, R
LOZZI, L
PASSACANTANDO, M
PICOZZI, P
SANTUCCI, S
机构：
[1] Dipartimento di Fisica, Università degli Studi di L'Aquila, 67010 Coppito, AQ
来源：
THIN SOLID FILMS | 1992年 / 213卷 / 02期
关键词：
D O I：
10.1016/0040-6090(92)90276-H
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：158 / 159
页数：2
相关论文
共 15 条
[11]  
SEAH MP, 1983, PRACTICAL SURFACE AN, P181
[12]   FORMATION OF LOW DEFECT DENSITY SIOX FILMS FOR JOSEPHSON INTEGRATED-CIRCUITS [J].
SHIBAYAMA, H ;
HASUO, S ;
YAMAOKA, T .
APPLIED PHYSICS LETTERS, 1985, 47 (04) :429-430
[13]  
THOMAS JH, 1985, J VAC SCI TECHNOL A, V3
[14]   2-DIMENSIONAL CHEMICAL-STATE PLOTS - STANDARDIZED DATA SET FOR USE IN IDENTIFYING CHEMICAL-STATES BY X-RAY PHOTOELECTRON-SPECTROSCOPY [J].
WAGNER, CD ;
GALE, LH ;
RAYMOND, RH .
ANALYTICAL CHEMISTRY, 1979, 51 (04) :466-482
[15]   X-RAY PHOTOELECTRON-SPECTROSCOPY ON SURFACE OXIDATION OF SILICON BY SOME CLEANING PROCEDURES [J].
WONG, CY ;
KLEPNER, SP .
APPLIED PHYSICS LETTERS, 1986, 48 (18) :1229-1230
12