DETERMINATION OF STOICHIOMETRY OF SIOX THIN-FILMS USING AN AUGER PARAMETER

被引:18
作者
ALFONSETTI, R
LOZZI, L
PASSACANTANDO, M
PICOZZI, P
SANTUCCI, S
机构
[1] Dipartimento di Fisica, Università degli Studi di L'Aquila, 67010 Coppito, AQ
关键词
D O I
10.1016/0040-6090(92)90276-H
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
[No abstract available]
引用
收藏
页码:158 / 159
页数:2
相关论文
共 15 条
[1]  
BRIGGS D, 1983, PRACTICAL SURFACE AN
[2]   INSTRUMENTATION FOR SURFACE STUDIES - XPS ANGULAR-DISTRIBUTIONS [J].
FADLEY, CS .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1974, 5 (NOV-D) :725-754
[3]   CHARACTERIZATION OF AMORPHOUS SIOX LAYERS WITH ESCA [J].
FINSTER, J ;
SCHULZE, D ;
MEISEL, A .
SURFACE SCIENCE, 1985, 162 (1-3) :671-679
[4]   OPTICAL PROPERTIES OF SILICON MONOXIDE IN THE WAVELENGTH REGION FROM 0.24 TO 14.0 MICRONS [J].
HASS, G ;
SALZBERG, CD .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1954, 44 (03) :181-187
[5]   LOW DEFECT DENSITY INSULATING FILMS DEPOSITED ON ROOM-TEMPERATURE SUBSTRATES [J].
MAGERLEIN, JH ;
BAKER, JM ;
PROTO, GR ;
GREBE, KR ;
KLEPNER, SP ;
PALMER, MJ ;
WARNECKE, AJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04) :636-640
[6]  
OLEARY MJ, 1987, J VAC SCI TECHNOL A, V5
[7]  
POWELL CJ, 1978, QUANTITATIVE SURFACE, V643, P5
[8]   X-RAY PHOTOELECTRON-SPECTROSCOPY OF SIO2-SI INTERFACIAL REGIONS - ULTRATHIN OXIDE-FILMS [J].
RAIDER, SI ;
FLITSCH, R .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1978, 22 (03) :294-303
[9]  
Ritter E., 1962, J MOD OPTIC, V9, P197, DOI [10.1080/713826414, DOI 10.1080/713826414]
[10]  
Seah M. P., 1980, Surface and Interface Analysis, V2, P222, DOI 10.1002/sia.740020607