HOT JET ETCHING OF GAAS AND SI

被引：25

作者：

GEIS, MW

EFREMOW, NN

LINCOLN, GA

机构：

[1] MIT, Lexington, MA, USA, MIT, Lexington, MA, USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 01期

关键词：

D O I：

10.1116/1.583321

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：315 / 317

页数：3

共 7 条

[1]

AKIYA H, 1981, 3RD P S DRY PROC TOK, P119

[2] ANISOTROPIC ETCHING OF AL BY A DIRECTED CL2 FLUX [J].

EFREMOW, NN ;

GEIS, MW ;

MOUNTAIN, RW ;

LINCOLN, GA ;

RANDALL, JN ;

ECONOMOU, NP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01) :337-340

[3] LASER CHEMICAL TECHNIQUE FOR RAPID DIRECT WRITING OF SURFACE RELIEF IN SILICON [J].

EHRLICH, DJ ;

OSGOOD, RM ;

DEUTSCH, TF .

APPLIED PHYSICS LETTERS, 1981, 38 (12) :1018-1020

[4] A NOVEL ANISOTROPIC DRY ETCHING TECHNIQUE [J].

GEIS, MW ;

LINCOLN, GA ;

EFREMOW, N ;

PIACENTINI, WJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1390-1393

[5] LARGE AREA ION-BEAM ASSISTED ETCHING OF GAAS WITH HIGH ETCH RATES AND CONTROLLED ANISOTROPY [J].

LINCOLN, GA ;

GEIS, MW ;

PANG, S ;

EFREMOW, NN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :1043-1046

[6]

SIDGWICK NV, 1951, CHEM ELEMENTS THEIR, P1030

[7]

Stull DR, 1971, JANAF THERMOCHEMICAL, V37

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