MICROWAVE CONDUCTIVITY OF SILICON AND GERMANIUM

被引：45

作者：

HOLM, JD

CHAMPLIN, KS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1968年 / 39卷 / 01期

关键词：

D O I：

10.1063/1.1655744

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：275 / &

共 32 条

[1] THEORY OF THE GALVANOMAGNETIC EFFECTS IN GERMANIUM [J].

ABELES, B ;

MEIBOOM, S .

PHYSICAL REVIEW, 1954, 95 (01) :31-37

[2] MICROWAVE OBSERVATION OF THE COLLISION FREQUENCY OF HOLES IN GERMANIUM [J].

BENEDICT, TS .

PHYSICAL REVIEW, 1953, 91 (06) :1565-1566

[3] MICROWAVE OBSERVATION OF THE COLLISION FREQUENCY OF ELECTRONS IN GERMANIUM [J].

BENEDICT, TS ;

SHOCKLEY, W .

PHYSICAL REVIEW, 1953, 89 (05) :1152-1153

[4]

BROOKS H, 1951, PHYS REV, V83, P870

[5]

CARDONA M, 1960, SOLID STATE PHYS, V1, P206

[6] INFLUENCE OF WAVEGUIDE CONTACT ON MEASURED COMPLEX PERMITTIVITY OF SEMICONDUCTORS [J].

CHAMPLIN, KS ;

GLOVER, GH .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) :2355-&

[7] ELECTRODELESS DETERMINATION OF SEMICONDUCTOR CONDUCTIVITY FROM TE01 DEGREES-MODE REFLECTIVITY [J].

CHAMPLIN, KS ;

HOLM, JD ;

GLOVER, GH .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (01) :96-+

[8] CHARGE CARRIER INERTIA IN SEMICONDUCTORS [J].

CHAMPLIN, KS ;

ARMSTRONG, DB ;

GUNDERSON, PD .

PROCEEDINGS OF THE IEEE, 1964, 52 (06) :677-+

[9] TEMPERATURE DEPENDENCE OF CONDUCTIVITY EFFECTIVE MASS OF HOLES IN GERMANIUM [J].

CHAMPLIN, KS ;

ARMSTRONG, DB ;

HOLM, JD ;

PATRIN, NA .

PHYSICAL REVIEW LETTERS, 1965, 14 (14) :547-+

[10] FREQUENCY DEPENDENCE OF HIGH-FREQUENCY TRANSPORT PROPERTIES OF CUBIC CRYSTALS [J].

CHAMPLIN, KS .

PHYSICAL REVIEW, 1963, 130 (04) :1374-+

← 1 2 3 4 →