HIGH-FIELD CONDUCTION PROCESSES IN SILICON-NITRIDE FILMS IN PRESENCE OF CHARGE TRAPPING

被引：8

作者：

POPOVA, LI ^{[1
]}

ANTOV, BZ ^{[1
]}

VITANOV, PK ^{[1
]}

机构：

[1] INST MICROELECTR,SOFIA 1113,BULGARIA

来源：

THIN SOLID FILMS | 1976年 / 36卷 / 01期

关键词：

D O I：

10.1016/0040-6090(76)90428-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：157 / 160

页数：4

共 10 条

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[7] EFFECTS OF BULK TRAPPING ON MEMORY CHARACTERISTICS OF THICK OXIDE MNOS VARIABLE-THRESHOLD CAPACITORS [J].

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SOLID-STATE ELECTRONICS, 1974, 17 (01) :1-10

[8] BIAS-TEMPERATURE-STRESS STUDIES OF CHARGE RETENTION IN DUAL-DIELECTRIC, CHARGE-STORAGE CELLS [J].

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NEPPELL, CT .

BELL SYSTEM TECHNICAL JOURNAL, 1974, 53 (09) :1741-1770

[9] METHOD FOR DETERMINATION OF HIGH-FIELD CONDUCTION LAWS IN INSULATING FILMS IN PRESENCE OF CHARGE TRAPPING [J].

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JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) :1178-+

[10] POOLE-FRENKEL WITH COMPENSATION PRESENT [J].

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