SILICON OXIDATION STUDIES - MEASUREMENT OF THE DIFFUSION OF OXIDANT IN SIO2-FILMS

被引：2

作者：

HELMS, CR ^{[1
]}

IRENE, EA ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1149/1.2123720

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2883 / 2883

页数：1

共 9 条

[1] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

HAMASAKI, M .

[3]

HAUL R, 1962, Z ELEKTROCHEM, V66, P636

IRENE, EA .

[5]

Muehlenbachs K, 1977, CAN MINERAL, V15, P179

[6]

NORTON FJ, 1961, NATURE, V171, P701

[7] THE MECHANISM OF OXYGEN DIFFUSION IN VITREOUS SIO2 [J].

REVESZ, AG ;

SCHAEFFER, HA .

[8] DIFFUSION OF OXYGEN IN VITREOUS SILICA [J].

SUCOV, EW .

[9] DIFFUSION OF OXYGEN IN FUSED SILICA [J].

WILLIAMS, EL .