SILICON OXIDATION STUDIES - MEASUREMENT OF THE DIFFUSION OF OXIDANT IN SIO2-FILMS

被引:2
作者
HELMS, CR [1 ]
IRENE, EA [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1149/1.2123720
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
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页码:2883 / 2883
页数:1
相关论文
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