ACCURACY OF VARIOUS THEORIES OF BAND-GAP NARROWING IN P-DOPED SEMICONDUCTORS

被引：15

作者：

BARDYSZEWSKI, W ^{[1
]}

YEVICK, D ^{[1
]}

机构：

[1] UNIV LUND, DEPT THEORET PHYS, S-22362 LUND, SWEDEN

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.35.619

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：619 / 625

页数：7

共 19 条

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