DIELECTRIC CORRECTION TO SHALLOW IMPURITY GROUND STATE IN SILICON

被引:19
作者
MULLER, K
机构
关键词
D O I
10.1016/0038-1098(64)90289-3
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:205 / 208
页数:4
相关论文
共 13 条
[1]   SCREENED COULOMB POTENTIAL IN KCL CRYSTAL [J].
AZUMA, M .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (02) :198-&
[2]   SPACE DEPENDENCE OF DIELECTRIC FUNCTION IN SI CRYSTAL [J].
AZUMA, M ;
SHINDO, K .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (03) :424-&
[3]   EFFECT OF LATTICE ON INTERNAL DIELECTRIC CONSTANT [J].
AZUMA, M .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1963, 18 (02) :194-&
[4]  
Born Max, 1954, DYNAMICAL THEORY CRY
[6]   DIRECT MEASUREMENT OF THE DIELECTRIC CONSTANTS OF SILICON AND GERMANIUM [J].
DUNLAP, WC ;
WATTERS, RL .
PHYSICAL REVIEW, 1953, 92 (06) :1396-1397
[7]   SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM [J].
KOHN, W .
SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 :257-320
[8]   HYPERFINE SPLITTING OF DONOR STATES IN SILICON [J].
KOHN, W ;
LUTTINGER, JM .
PHYSICAL REVIEW, 1955, 97 (04) :883-888
[9]   THEORY OF IMPURITY LEVELS [J].
MORITA, A ;
NARA, H ;
AZUMA, M .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (10) :1570-&
[10]  
MULLER K, UNPUB ANN PHYSIK