CURRENT TRANSPORT IN AL/INALAS/INGAAS HETEROSTRUCTURES

被引：18
|
作者：
MORGAN, DV [1 ]
BOARD, K [1 ]
WOOD, CEC [1 ]
EASTMAN, LF [1 ]
机构：
[1] CORNELL UNIV,FAC RESOURCE SUBMICRON STRUCT,ITHACA,NY 14853
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 72卷 / 01期
关键词：
D O I：
10.1002/pssa.2210720125
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：251 / 260
页数：10
相关论文
共 50 条
  • [31] RESONANT TUNNELING BIPOLAR-TRANSISTORS USING INALAS INGAAS HETEROSTRUCTURES
    FUTATSUGI, T
    YAMAGUCHI, Y
    MUTO, S
    YOKOYAMA, N
    SHIBATOMI, A
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (04) : 1771 - 1775
  • [32] STRUCTURAL AND MAGNETOTRANSPORT PROPERTIES OF INGAAS/INALAS HETEROSTRUCTURES GROWN ON LINEARLY-GRADED AL(INGA)AS BUFFERS ON GAAS
    GOLDMAN, RS
    CHEN, JH
    KAVANAGH, KL
    WIEDER, HH
    ROBBINS, VM
    MILLER, JN
    COMPOUND SEMICONDUCTORS 1994, 1995, (141): : 313 - 318
  • [33] A study of P-type ohmic contacts to InAlAs/InGaAs heterostructures
    Briggs, RD
    Howard, AJ
    Baca, AG
    Hafich, MJ
    Vawter, GA
    THIN SOLID FILMS, 1996, 290 : 508 - 512
  • [34] Spin splitting in pseudomorphic InGaAs/InAlAs graded heterostructures as B→0
    Gui, YS
    Zheng, GZ
    Guo, SL
    Chu, JH
    Tang, DY
    Chen, JX
    Li, AZ
    ACTA PHYSICA SINICA, 1999, 48 (01) : 121 - 126
  • [35] SELECTIVE REACTIVE ION ETCHING OF INGAAS/INALAS HETEROSTRUCTURES IN HBR PLASMA
    AGARWALA, S
    ADESIDA, I
    CANEAU, C
    BHAT, R
    APPLIED PHYSICS LETTERS, 1993, 62 (22) : 2830 - 2832
  • [36] The third subband population in modulation-doped InGaAs/InAlAs heterostructures
    Li, HX
    Wang, ZG
    Liang, JB
    Xu, B
    Wu, J
    Gong, Q
    Jiang, C
    Liu, FQ
    Zhou, W
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (12) : 6107 - 6109
  • [37] High-mobility InGaAs/InAlAs pseudomorphic heterostructures on InP (001)
    Wallart, X
    Pinsard, B
    Mollot, F
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (05)
  • [38] SELECTIVE PHOTOCHEMICAL DRY ETCHING OF GAAS/ALGAAS AND INGAAS/INALAS HETEROSTRUCTURES
    KOSUGI, M
    KURODA, S
    HARADA, N
    KATAKAMI, T
    ELECTRONICS LETTERS, 1991, 27 (23) : 2113 - 2115
  • [39] Current oscillations under lateral transport in GaAs/InGaAs quantum well heterostructures
    A. V. Antonov
    V. I. Gavrilenko
    E. V. Demidov
    B. N. Zvonkov
    E. A. Uskova
    Semiconductors, 2005, 39 : 44 - 49
  • [40] Current oscillations under lateral transport in GaAs/InGaAs quantum well heterostructures
    Antonov, AV
    Gavrilenko, VI
    Demidov, EV
    Zvonkov, BN
    Uskova, EA
    SEMICONDUCTORS, 2005, 39 (01) : 44 - 49
12345