TIME-DEPENDENT BEHAVIOR OF A RESONANT-TUNNELING DIODE

被引:1
作者
ZOHTA, Y
机构
[1] Department of Engineering Science, Tokyo Engineering University, Hachioji, Tokyo 192, 1404-1, Katakura
来源
PHYSICAL REVIEW B | 1995年 / 51卷 / 11期
关键词
D O I
10.1103/PhysRevB.51.7307
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
By use of the improved optical model we have recently developed, it is shown that the resonant-tunneling current through a double-barrier structure is made up of two different components; one responds fast to an external signal and another component responds slowly to it. The fast component is carried by electrons that emit longitudinal-optical phonons during transport and reduce the time delay to pass through the structure, while the transverse energy of electrons responsible for the slow component is not sufficiently high to emit longitudinal-optical phonons in the well. The ratio of the two components depends on electron concentrations in the emitter of the double-barrier structure. © 1995 The American Physical Society.
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页码:7307 / 7309
页数:3
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