ELECTRON THERMAL EMISSION RATES OF NICKEL CENTERS IN SILICON

被引：10
作者：
JARAIZ, M
DUENAS, S
VICENTE, J
BAILON, L
BARBOLLA, J
机构：
[1] Univ de Valladolid, Spain, Univ de Valladolid, Spain
来源：
SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 09期
关键词：
D O I：
10.1016/0038-1101(86)90008-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
12
引用
收藏
页码：883 / 884
页数：2
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