ELECTRON THERMAL EMISSION RATES OF NICKEL CENTERS IN SILICON

被引：10

作者：

JARAIZ, M

DUENAS, S

VICENTE, J

BAILON, L

BARBOLLA, J

机构：

[1] Univ de Valladolid, Spain, Univ de Valladolid, Spain

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 09期

关键词：

D O I：

10.1016/0038-1101(86)90008-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：883 / 884

页数：2

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