HIGH WALLPLUG EFFICIENCY VERTICAL-CAVITY SURFACE-EMITTING LASERS USING LOWER BARRIER DBR MIRRORS

被引：27
作者：
PETERS, MG
PETERS, FH
YOUNG, DB
SCOTT, JW
THIBEAULT, BJ
COLDREN, LA
机构：
[1] University of California, Santa Barbara
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 02期
关键词：
LASERS; SEMICONDUCTOR LASERS;
D O I：
10.1049/el:19930115
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A lower energy barrier p-type Al0.67Ga0.33As/GaAs DBR mirror has been incorporated into a previously reported vertical-cavity surface-emitting laser structure. CW measurements at room temperature demonstrate lower threshold voltages of 1.86 V, and a record high power-conversion efficiency of 14.9% was achieved.
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页码：170 / 172
页数：3
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