BEHAVIOR OF ELECTRONICS DEVICES IRRADIATED BY PROTONS IN THE ENERGY-RANGE 50-500 MEV

被引：0

作者：

BUISSON, J

机构：

来源：

ANNALES DE CHIMIE-SCIENCE DES MATERIAUX | 1992年 / 17卷 / 7-8期

关键词：

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

After a short description of the space environment and the effects induced by protons on electronics devices, the irradiation line used to simulate this environment is described and some results of cross-sections obtained on SRAM are given.

引用

页码：507 / 520

页数：14