RAMAN-SCATTERING FROM ULTRAHEAVILY-ION-IMPLANTED AND LASER-ANNEALED SILICON

被引：10

作者：

SHUKLA, AK

JAIN, KP

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.34.8950

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8950 / 8953

页数：4

共 18 条

[1]

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