CONTROL OF SCHOTTKY-BARRIER HEIGHT OF AG/MN/N-GAAS(110) DIODES WITH MN INTERLAYER THICKNESS

Schottky diodes were prepared by depositing Mn and thereafter Ag onto ultrahigh vacuum cleaved n-type GaAs(110). The Mn interlayer thickness was varied from 0 to 15 angstrom, while the subsequent Ag coverage was 600 angstrom for all samples. These diodes were characterized by current-voltage (I-V) and capacitance-voltage (C-V) techniques. The variation of the Mn interlayer thickness allows the barrier height to be tuned from 0.92 eV for pure Ag, i.e. no Mn interlayer, to 0.76 eV at 15 angstrom of Mn (pure Mn on GaAs(110): 0.74 eV). For interlayers above 1 angstrom the barrier height was found to decrease exponentially with increasing Mn thickness.