THE GROWTH OF THIN OXIDES ON A-SI AND A-SI-H IN AN O2 PLASMA

被引：6
|
作者：
COLLINS, RW
TUCKERMAN, CJ
HUANG, CY
WINDISCHMANN, H
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 06期
关键词：
D O I：
10.1116/1.572927
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：2077 / 2081
页数：5
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