PHOTOABLATIVE ETCHING OF LANGMUIR-BLODGETT-FILMS

被引：2
|
作者：
MAGAN, JD [1 ]
LEMOINE, P [1 ]
BLAU, W [1 ]
HOGAN, M [1 ]
LUPO, D [1 ]
PRASS, W [1 ]
SCHEUNEMANN, U [1 ]
机构：
[1] HOECHST AG,W-6230 FRANKFURT 80,GERMANY
来源：
THIN SOLID FILMS | 1990年 / 191卷 / 02期
关键词：
D O I：
10.1016/0040-6090(90)90385-Q
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The photoablative properties of a variety of Langmuir-Blodgett (LB) films on silicon and quartz are reported at 193 nm and at 248 nm. The etch rate is observed to change for very thin films depending on the substrate material. No spectral changes have been observed in the remaining material, suggesting no degradation, and this technique appears to be viable for use in the lithography of LB films. © 1990.
引用
收藏
页码：349 / 359
页数：11
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