COLLECTOR-EMITTER OFFSET VOLTAGE IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：80

作者：

CHAND, N

FISCHER, R

MORKOC, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 03期

关键词：

D O I：

10.1063/1.96203

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：313 / 315

页数：3

共 8 条

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[7] ORIGIN OF HIGH OFFSET VOLTAGE IN AN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR [J].

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[8] DOUBLE HETEROJUNCTION GAAS/ALXGA1-XAS BIPOLAR-TRANSISTORS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

SU, SL ;

FISCHER, R ;

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MORKOC, H .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6725-6731

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