EFFECT OF DONOR IMPURITIES ON DIRECT-INDIRECT TRANSITION IN GA(AS1-XPX) - (S SE AND TE DOPING - EFFECT ON JUNCTION LASER WAVELENGTH - E/T)

被引：39
作者：
HOLONYAK, N
NUESE, CJ
SIRKIS, MD
STILLMAN, GE
机构：
来源：
APPLIED PHYSICS LETTERS | 1966年 / 8卷 / 04期
关键词：
D O I：
10.1063/1.1754498
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：83 / &
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