REACTIVE ION ETCHING OF INP USING CH4/H2 MIXTURES - MECHANISMS OF ETCHING AND ANISOTROPY

被引：167
作者：
HAYES, TR
DREISBACH, MA
THOMAS, PM
DAUTREMONTSMITH, WC
HEIMBROOK, LA
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 05期
关键词：
D O I：
10.1116/1.584564
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：1130 / 1140
页数：11
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