EFFECT OF HYDROGEN ON AMORPHOUS SILICON

被引：33

作者：

HAUSER, JJ ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

SOLID STATE COMMUNICATIONS | 1976年 / 19卷 / 11期

关键词：

D O I：

10.1016/0038-1098(76)90096-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1049 / 1051

页数：3

共 10 条

[1] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J].

BRODSKY, MH ;

TITLE, RS ;

WEISER, K ;

PETTIT, GD .

PHYSICAL REVIEW B, 1970, 1 (06) :2632-&

[2]

Chittick R. C., 1970, J NON-CRYST SOLIDS, V3, P255

[3] USE OF HYDROGENATION IN STRUCTURAL AND ELECTRONIC STUDIES OF GAP STATES IN AMORPHOUS-GERMANIUM [J].

CONNELL, GAN ;

PAWLIK, JR .

PHYSICAL REVIEW B, 1976, 13 (02) :787-804

[4]

GACZI P, 1976, B AM PHYS SOC, V21, P335

[5] ELECTRICAL AND STRUCTURAL-PROPERTIES OF AMORPHOUS GERMANIUM [J].

HAUSER, JJ ;

STAUDINGER, A .

PHYSICAL REVIEW B, 1973, 8 (02) :607-615

[6] ELECTRICAL PROPERTIES AND ANISOTROPY IN AMORPHOUS SI AND SI0.5 GE0.5 ALLOY [J].

HAUSER, JJ .

PHYSICAL REVIEW B, 1973, 8 (08) :3817-3823

[7]

Le Comber P. G., 1972, Journal of Non-Crystalline Solids, V11, P219, DOI 10.1016/0022-3093(72)90004-X

[8]

Le Comber P. G., 1974, 5th International Conference on amorphous and liquid semiconductors, Vol.I, P245

[9] EFFECTS OF HYDROGEN CONTAMINATION ON LOCALIZED STATES IN AMORPHOUS SILICON [J].

MALHOTRA, AK ;

NEUDECK, GW .

APPLIED PHYSICS LETTERS, 1976, 28 (01) :47-49

[10] ELECTRICAL CONDUCTION IN AMORPHOUS SILICON AND GERMANIUM [J].

WALLEY, PA .

THIN SOLID FILMS, 1968, 2 (04) :327-&

← 1 →