GAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS FOR VERY HIGH-PERFORMANCE ELECTRONIC-CIRCUITS

被引：33
|
作者：
ASBECK, PM [1 ]
CHANG, FMC [1 ]
WANG, KC [1 ]
SULLIVAN, GJ [1 ]
CHEUNG, DT [1 ]
机构：
[1] ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360
来源：
PROCEEDINGS OF THE IEEE | 1993年 / 81卷 / 12期
关键词：
D O I：
10.1109/5.248960
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reviews the principles and status of AlGaAs/GaAs heterojunction bipolar transistor technology. Comparisons of this technology with Si bipolar transistor and GaAs field-effect transistor technologies are made. Epitaxial materials, fabrication processes, transistor dc and RF characteristics, and modeling of AlGaAs/GaAs HBT's are described. Key areas of HBT application are also highlighted.
引用
收藏
页码：1709 / 1726
页数：18
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