GAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS FOR VERY HIGH-PERFORMANCE ELECTRONIC-CIRCUITS

被引：33

作者：

ASBECK, PM ^{[1
]}

CHANG, FMC ^{[1
]}

WANG, KC ^{[1
]}

SULLIVAN, GJ ^{[1
]}

CHEUNG, DT ^{[1
]}

机构：

[1] ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360

来源：

PROCEEDINGS OF THE IEEE | 1993年 / 81卷 / 12期

关键词：

D O I：

10.1109/5.248960

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reviews the principles and status of AlGaAs/GaAs heterojunction bipolar transistor technology. Comparisons of this technology with Si bipolar transistor and GaAs field-effect transistor technologies are made. Epitaxial materials, fabrication processes, transistor dc and RF characteristics, and modeling of AlGaAs/GaAs HBT's are described. Key areas of HBT application are also highlighted.

引用

页码：1709 / 1726

页数：18

共 50 条

[1] A SURVEY OF THERMAL-ELECTRIC FEEDBACK COEFFICIENTS IN GAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS
LIU, W
YUKSEL, A
SOLID-STATE ELECTRONICS, 1995, 38 (02) : 407 - 411
[2] EMITTER MATERIAL COMPARISON BETWEEN INGAP AND INGAASP IN GAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS
OHKUBO, M
IKETANI, A
IKEDA, M
NINOMIYA, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (7B): : L993 - L995
[3] Physics of degradation in GaAs-based heterojunction bipolar transistors
Henderson, T
MICROELECTRONICS RELIABILITY, 1999, 39 (6-7) : 1033 - 1042
[4] COMPARISON OF H+ AND HE+ IMPLANT ISOLATION OF GAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS
PEARTON, SJ
ABERNATHY, CR
LEE, JW
REN, F
WU, CS
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (01): : 15 - 18
[5] HIGH-PERFORMANCE GAINP/GAAS HOLE BARRIER BIPOLAR-TRANSISTORS (HBBTS)
LEIER, H
SCHAPER, U
BACHEM, KH
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 (136): : 145 - 152
[6] MEASUREMENT OF THE ELECTRON IONIZATION COEFFICIENT AT LOW ELECTRIC-FIELDS IN GAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS
CANALI, C
CAPASSO, F
MALIK, R
NEVIANI, A
PAVAN, P
TEDESCO, C
ZANONI, E
IEEE ELECTRON DEVICE LETTERS, 1994, 15 (09) : 354 - 356
[7] Quasiballistic transport in GaAs-based heterojunction and homojunction bipolar transistors
St Denis, AR
Pulfrey, DL
JOURNAL OF APPLIED PHYSICS, 1998, 84 (09) : 4959 - 4965
[8] PHOTOLUMINESCENCE IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
EDA, K
INADA, M
JOURNAL OF APPLIED PHYSICS, 1987, 62 (10) : 4236 - 4243
[9] GE-GAAS HETEROJUNCTION FOR BIPOLAR-TRANSISTORS
ITOH, T
ISHIZUKA, F
SUGIOKA, K
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) : C220 - C220
[10] The safe operating area of GaAs-based heterojunction bipolar transistors
Lee, Chien-Ping
Chati, Frank H. E.
Ma, Wenlong
Wang, Nanlei Larry
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (11) : 2681 - 2688

← 1 2 3 4 5 →