GATE CURRENT IN ALINAS/GAINAS HETEROSTRUCTURE INSULATED-GATE FIELD-EFFECT TRANSISTORS (HIGFETS)

被引：2
|
作者：
KAMADA, M [1 ]
ISHIKAWA, H [1 ]
FENG, M [1 ]
机构：
[1] UNIV ILLINOIS,CTR COMPOUND SEMICOND MICROELECTR,MICROELECTR LAB,URBANA,IL 61801
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 08期
关键词：
D O I：
10.1109/16.223692
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A self-aligned WSi gate heterostructure insulated-gate field-effect transistor (HIGFET) with a gate length of 1 mum was fabricated using an AlInAs/GaInAs heterostructure grown by atmospheric pressure metal-organic chemical vapor deposition (MOCVD). The gate current is investigated experimentally and theoretically. The measured gate current was found to be about two orders of magnitude higher than predicted by theory. The origin of this increase is unclear. However, the theoretical result suggests the possibility of reducing the gate current in AlInAs/GaInAs HIGFET's.
引用
收藏
页码：1358 / 1363
页数：6
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