EFFECTS OF INTERFACIAL STATES ON THE CAPACITANCE-VOLTAGE CHARACTERISTICS OF PD/SIO2/N-SI SCHOTTKY DIODES

被引：4
作者：
BAGNOLI, PE
NANNINI, A
机构：
来源：
SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 10期
关键词：
D O I：
10.1016/0038-1101(87)90091-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：1005 / 1012
页数：8
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共 21 条
[1]   ELECTRICAL CHARACTERISTICS OF GAAS MIS SCHOTTKY DIODES [J].
ASHOK, S ;
BORREGO, JM ;
GUTMANN, RJ .
SOLID-STATE ELECTRONICS, 1979, 22 (07) :621-631
[2]  
BAGNOLI PE, 1986, INTERNAL REPORT I EL
[3]  
BAGNOLI PE, 1984, 85TH P AEI ANN M RIV
[4]   STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].
CARD, HC ;
RHODERICK, EH .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+
[5]  
COWLEY AM, 1966, J APPL PHYS, V37, P887
[6]   PD-SI SCHOTTKY DIODES AS HYDROGEN SENSING DEVICES - CAPACITANCE-VOLTAGE CHARACTERISTICS [J].
DILIGENTI, A ;
STAGI, M ;
CIUTI, V .
SOLID STATE COMMUNICATIONS, 1983, 45 (04) :347-350
[7]   REVERSIBLE NEUTRALIZATION OF BORON ACCEPTORS BY HYDROGEN IN PD-SIO2-SI CAPACITORS [J].
FARE, TL ;
LUNDSTROM, I ;
ZEMEL, JN ;
FEYGENSON, A .
APPLIED PHYSICS LETTERS, 1986, 48 (10) :632-634
[8]   A REEVALUATION OF THE MEANING OF CAPACITANCE PLOTS FOR SCHOTTKY-BARRIER-TYPE DIODES [J].
FONASH, SJ .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :1966-1975
[9]   PHYSICAL THEORY OF SEMICONDUCTOR SURFACES [J].
GARRETT, CGB ;
BRATTAIN, WH .
PHYSICAL REVIEW, 1955, 99 (02) :376-387
[10]   SILICON CLEANING WITH HYDROGEN PEROXIDE SOLUTIONS - HIGH ENERGY ELECTRON DIFFRACTION AND AUGER ELECTRON SPECTROSCOPY STUDY [J].
HENDERSON, RC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) :772-+
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