BINDING AND FORMATION ENERGIES OF NATIVE DEFECT PAIRS IN GAAS

被引：127

作者：

BARAFF, GA

SCHLUTER, M

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.33.7346

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7346 / 7348

页数：3

共 11 条

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[2] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS [J].

BARAFF, GA ;

SCHLUTER, M .

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[3] BISTABILITY AND METASTABILITY OF THE GALLIUM VACANCY IN GAAS - THE ACTUATOR OF EL2 [J].

BARAFF, GA ;

SCHLUTER, M .

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[4]

BARAFF GA, 1981, DEFECTS RAD EFFECTS

[5] NORM-CONSERVING PSEUDOPOTENTIALS [J].

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SCHLUTER, M ;

CHIANG, C .

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[6]

KRAUT EA, 1984, J VAC SCI TECHNOL B, V2, P209

[7]

Kroger F A., 1964, CHEM IMPERFECT CRYST

[8]

Lagowski J., 1985, Thirteenth International Conference on Defects in Semiconductors, P73

[9]

LAGOWSKI J, 1982, IOP C SERIES, V65

[10] SIMPLE THEORETICAL ESTIMATES OF ENTHALPY OF ANTISTRUCTURE PAIR FORMATION AND VIRTUAL-ENTHALPIES OF ISOLATED ANTISITE DEFECTS IN ZINCBLENDE AND WURTZITE TYPE SEMICONDUCTORS [J].

VANVECHTEN, JA .

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