共 8 条
- [2] BAGAEV VS, 1964, SOV PHYS SOLID STATE, V6, P1093
- [3] INFRARED ABSORPTION IN HEAVILY DOPED N-TYPE SI [J]. PHYSICA STATUS SOLIDI, 1969, 31 (01): : 323 - +
- [4] BAND-GAP NARROWING IN HEAVILY DOPED MANY-VALLEY SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1981, 24 (04): : 1971 - 1986
- [5] GELMONT BL, 1984, SOV PHYS SEMICOND+, V18, P506
- [6] ENERGY-GAP IN SI AND GE - IMPURITY DEPENDENCE [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2634 - 2646
- [7] SHKLOVSKII BI, 1984, ELECTRONIC PROPERTIE