NANOLITHOGRAPHY ON SEMICONDUCTOR SURFACES UNDER AN ETCHING SOLUTION

被引：92
作者：
NAGAHARA, LA
THUNDAT, T
LINDSAY, SM
机构：
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 03期
关键词：
D O I：
10.1063/1.103711
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We describe a technique for controllably etching nanometer size features into Si(100) and GaAs(100) surfaces with the scanning tunneling microscope while under a (0.05%) HF solution which dissolves oxides. The etching mechanism appears to be due to a field-induced oxide growth followed by a chemical etching of the oxide. With this technique, we can etch features as small as 20 nm in linewidth.
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页码：270 / 272
页数：3
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